Characterization of a-C:H:N deposition from CH4/N2 rf plasmas using optical emission spectroscopy
نویسندگان
چکیده
Optical emission spectra ~OES! from CH4/N2 rf plasmas, which are used for the deposition of nitrogen-containing hydrogenated amorphous carbon ~a-C:H:N! thin films, have been characterized. Previously unidentified spectral lines have been assigned to atomic N. Further identified species include CH, H, H2, N2, N2 1 , N, and CN. Variations between spectra from the pure CH4 or N2 plasmas and the mixed CH4/N2 plasma are discussed. The enhancement of excited nitrogen species, with the addition CH4, is attributed to Penning ionization. The observed OES variations of the CH4/N2 plasma with power, pressure, and CH4/N2 ratio are explained in terms of possible reaction mechanisms and their activation, and correlated with preliminary film growth characteristics. © 1996 American Institute of Physics. @S0021-8979~96!06809-3#
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